2SK2975 MITSUBISHI RF Power MOS FET

4.90 

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Descripción

2SK2975 MITSUBISHI RF Power MOS FET

2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.

FEATURES

• High power gain:Gpe>8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm

• High efficiency:55% typ.

• Source case type seramic package (connected internally to source)

APPLICATION

For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.

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