2SK2975 MITSUBISHI RF Power MOS FET
2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
• High power gain:Gpe>8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package (connected internally to source)
For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.